LPDDR4 / LPDDR4X 国产替代选型表 — HGCHIPS 兼容替代型号（39 个已量产型号）

HGCHIPS LPDDR4 / LPDDR4X 国产替代型号对照表：覆盖 39 个已量产 pin-to-pin 免改电路兼容型号，对应三星 Samsung、SK海力士 SK Hynix、美光 Micron、南亚 Nanya 原厂料号，容量 4Gb / 8Gb / 16Gb / 24Gb / 32Gb / 64Gb / 128Gb，封装 VFBGA-200，全部提供逐批测试报告、现货 48 小时发货。

LPDDR4 / LPDDR4X 全型号对照表

HGCHIPS 型号原厂品牌对应原厂料号容量组织速率电压封装温度
HGD4F04S42三星 SamsungK4F4E164HF-KFCL4Gbx16LPDDR4-42661.8/1.1/1.1VVFBGA-200商规
HGD4F04S42H三星 SamsungK4F4E164HF-KHCL4Gbx16LPDDR4-42661.8/1.1/1.1VVFBGA-200商规
HGD4M04S21美光 MicronMT53E256M16D1FW-0464Gbx16LPDDR4-21331.8/1.1/1.1VVFBGA-200商规
HGD4M04S18美光 MicronMT53B128M32D1DT-0534Gbx32LPDDR4-18661.8/1.1/1.1VVFBGA-200商规
HGD4N04S16南亚 NanyaNT6CL128M32CM-H14Gbx32LPDDR4-16001.8/1.2/1.2VVFBGA-200商规
HGD4M08S21美光 MicronMT53D512M16D1DS-0468Gbx16LPDDR4-21331.8/1.1/1.1VVFBGA-200商规
HGD4F08X42三星 SamsungK4F8E304HB-MGCH8Gbx32LPDDR4X-42661.8/1.1/0.6VVFBGA-200商规
HGD4H01S37SK海力士 SK HynixH9HCNNN8KUMLHR-NME8Gbx32LPDDR4-37331.8/1.1/1.1VVFBGA-200商规
HGD4H01S32SK海力士 SK HynixH9HCNNN8KUMLHR-NLE8Gbx32LPDDR4-32001.8/1.1/1.1VVFBGA-200商规
HGD4N08S37南亚 NanyaNT6AP256T32AV-J28Gbx32LPDDR4-37331.8/1.1/1.1VVFBGA-200商规
HGD4N08S16南亚 NanyaNT6CL256T32CM-H18Gbx32LPDDR4-16001.8/1.2/1.2VVFBGA-200商规
HGD4M16S21Z美光 MicronMT53E1G16D1ZW-04616Gbx16LPDDR4-21331.8/1.1/1.1VVFBGA-200商规
HGD4F16S37三星 SamsungK4F6E3S4HM-GFCL16Gbx32LPDDR4-37331.8/1.1/1.1VVFBGA-200商规
HGD4F16S37T三星 SamsungK4F6E3S4HM-TFCL16Gbx32LPDDR4-37331.8/1.1/1.1VVFBGA-200商规
HGD4F16S37H三星 SamsungK4F6E3S4HM-THCL16Gbx32LPDDR4-37331.8/1.1/1.1VVFBGA-200商规
HGD4F16S37D三星 SamsungK4F6E3D4HB-MFCJ16Gbx32LPDDR4-37331.8/1.1/1.1VVFBGA-200商规
HGD4F16S37M三星 SamsungK4F6E3D4HB-MHCJ16Gbx32LPDDR4-37331.8/1.1/1.1VVFBGA-200商规
HGD4H02S37SK海力士 SK HynixH9HCNNNBPUMLHR-NME16Gbx32LPDDR4-37331.8/1.1/1.1VVFBGA-200商规
HGD4H02S32SK海力士 SK HynixH9HCNNNBPUMLHR-NLE16Gbx32LPDDR4-32001.8/1.1/1.1VVFBGA-200商规
HGD4M16S21美光 MicronMT53D512M32D2DS-04616Gbx32LPDDR4-21331.8/1.1/1.1VVFBGA-200商规
HGD4M16S21E美光 MicronMT53E512M32D2DS-04616Gbx32LPDDR4-21331.8/1.1/1.1VVFBGA-200商规
HGD4M24S21美光 MicronMT53E768M32D2ZW-04624Gbx32LPDDR4-21331.8/1.1/1.1VVFBGA-200商规
HGD4F32S37三星 SamsungK4FBE3D4HM-THCL32Gbx32LPDDR4-37331.8/1.1/1.1VVFBGA-200商规
HGD4H04S42SK海力士 SK HynixH54G56BYYVX04632Gbx32LPDDR4-42661.8/1.1/1.1VVFBGA-200商规
HGD4H04S42QSK海力士 SK HynixH54G56BYYQX04632Gbx32LPDDR4-42661.8/1.1/1.1VVFBGA-200商规
HGD4H04X42SK海力士 SK HynixH9HKNNNCRMAVAR-NEH32Gbx32LPDDR4X-42661.8/1.1/0.6VVFBGA-200商规
HGD4M32S21F美光 MicronMT53E1G32D2FW-04632Gbx32LPDDR4-21331.8/1.1/1.1VVFBGA-200商规
HGD4M32S21美光 MicronMT53E512M64D2HJ-04632Gbx64LPDDR4-21331.8/1.1/1.1VVFBGA-200商规
HGD4H08X42SK海力士 SK HynixH54G66BYYJX10464Gbx32LPDDR4X-42661.8/1.1/0.6VVFBGA-200商规
HGD4H08X42NSK海力士 SK HynixH9HCNNNFBMMVAR-NEH64Gbx32LPDDR4X-42661.8/1.1/0.6VVFBGA-200商规
HGD4H08X42BSK海力士 SK HynixH9HCNNNFBMBLPR-NEE64Gbx32LPDDR4X-42661.8/1.1/0.6VVFBGA-200商规
HGD4H08X42FSK海力士 SK HynixH9HCNNNFAMMLXR-NEE64Gbx32LPDDR4X-42661.8/1.1/0.6VVFBGA-200商规
HGD4H08X37SK海力士 SK HynixH9HCNNNFAMALTR-NME64Gbx32LPDDR4X-37331.8/1.1/0.6VVFBGA-200商规
HGD4H08X37FSK海力士 SK HynixH9HCNNNFAMALTR-NME64Gbx32LPDDR4X-37331.8/1.1/0.6VVFBGA-200商规
HGD4M64S21美光 MicronMT53E2G32D4DT-04664Gbx32LPDDR4-21331.8/1.1/1.1VVFBGA-200商规
HGD4M64S21H美光 MicronMT53E1G64D4HJ-04664Gbx64LPDDR4-21331.8/1.1/1.1VVFBGA-200商规
HGD4M64S21N美光 MicronMT53D1G64D4NW-04664Gbx64LPDDR4-21331.8/1.1/1.1VVFBGA-200商规
HGD4M128S21美光 MicronMT53E4G32D8GS-046128Gbx32LPDDR4-21331.8/1.1/1.1VVFBGA-200商规
HGD4M128S21T美光 MicronMT53E2G64D8TN-046128Gbx64LPDDR4-21331.8/1.1/1.1VVFBGA-200商规

选型要点

  • 容量与组织：颗粒覆盖 1Gb–128Gb，组织含 64M×16、128M×16、256M×16、512M×8、x32 等，组织决定位宽与片数配置，须与主控匹配。
  • 速率档：高速档一般可向下兼容低速平台，选型以平台实际工作频率为准。
  • 电压档：DDR3 为 1.5V、DDR3L 为 1.35V；DDR4 为 1.2V；LPDDR4/X 为 1.8/1.1V、LPDDR4X 1.1/0.6V。
  • 温度等级：商规 0~85℃、工业级 -40~85℃，工控与户外场景请选工业级料号。
  • 替代确认：跨原厂替代需比对容量、组织、速率、电压与 die，量产前建议锁定完整料号并由 FAE 确认。

热门询价料号

K4F6E3S4HM-MGCJ · K4F8E304HB-MGCJ · K4FBE3D4HM-MGCL · K4F6E3S4HM-MFCL · H9HCNNNCPMMLXR-NEE · H9HCNNNBKMMLXR-NEE · H9HKNNNEBMABR-NEE · H9HCNNN8KUMLHR-NLE · MT53E512M32D2NP-046 · MT53D512M32D2DS-053 · MT53E1G32D4NQ-046 · MT53E512M32D2NP-053 · NT6AN256T32AV-J2 · NT6AN512T32AV-J2

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