K4B4G1646E-BYK0 Drop-in Replacement — HGCHIPS HGD34G16L18E

Looking for a reliable domestic supply alternative to K4B4G1646E-BYK0 (Samsung)? The production part HGD34G16L18E aligns with it on density, organization, speed grade and package and can be used as a second source or long-term stock plan. Send us the full part number and platform details before ramp-up so our FAE team can confirm pin-out and die revision.

K4B4G1646E-BYK0 Specifications

BrandSamsung
Original part numberK4B4G1646E-BYK0
Product familyDDR3 SDRAM
Density4Gb
Organization256Mx16
Speed grade-
Voltage-V
Package-
TemperatureIndustrial -40~85C

Cross-reference: K4B4G1646E-BYK0 → HGD34G16L18E

ItemSamsung (original)HGD34G16L18E (HGCHIPS)
Product familyDDR3 SDRAMDDR3 SDRAM
Density4Gb4Gb
Organization256Mx16256Mx16
Speed grade--
Voltage-V-V
Package--
Temperature--
CompatibilityOriginalspec-aligned (FAE confirmation required)

Replacement Notes

  • No circuit change — identical package and pin-out, replace directly in the BOM for pilot run.
  • Lot test reports — 100% tested before shipment, test data available per lot for IQC records.
  • Speed and voltage grades — a higher speed grade is downward compatible; commercial grade does not replace industrial grade, pick -40~85C parts for industrial and outdoor designs.
  • Qualification advice — send the full part number (with suffix) and platform details so our FAE team can confirm die revision and timing before volume production.

Ordering and Samples

  • In stock, ships within 48 hours; price lock available for long-term projects.
  • Samples from 10 pcs, cost credited against your first order.
  • Small pilot runs and volume production supported with lot traceability.

Related Replacements

Same family: H5TC2G63DFR-RDA / H5TC2G83DFR-RDA / H5TC4G63EFR-RDI / H5TC4G63EFR-RDN / H5TC4G63EFR-TEN / H5TC4G83EFR-PBA / H5TC4G83EFR-RDI / H5TC8G63CMR-PBA

HGCHIPS HGD34G16L18E part page · Model Finder · Contact: info@hgtech.cc · +86 760 8992 4799

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