HGCHIPS DDR3 SDRAM pin-to-pin cross-reference: 57 production parts engineered against Samsung, SK Hynix, Micron and Nanya original part numbers. Packages VFBGA-96. Lot test reports and 48-hour dispatch on stock.
| HGCHIPS part | Brand | Original part | Density | Org | Speed | Voltage | Package | Temp |
|---|---|---|---|---|---|---|---|---|
| HGD31G08S16 | Samsung | K4B1G0846I-BCK0 | 1Gb | 128Mx8 | DDR3-1600 | 1.5V (DDR3) | VFBGA-96 | Commercial |
| HGD31G08S21 | Samsung | K4B1G0846I-BCNB | 1Gb | 128Mx8 | DDR3-2133 | 1.5V (DDR3) | VFBGA-96 | Commercial |
| HGD31G16S16 | Samsung | K4B1G1646I-BCK0 | 1Gb | 64Mx16 | DDR3-1600 | 1.5V (DDR3) | VFBGA-96 | Commercial |
| HGD31G16S18 | Samsung | K4B1G1646I-BCMA | 1Gb | 64Mx16 | DDR3-1866 | 1.5V (DDR3) | VFBGA-96 | Commercial |
| HGD31G16H13 | SK Hynix | H5TQ1G63DFR-11C | 1Gb | 64Mx16 | DDR3-1333 | 1.5V (DDR3) | VFBGA-96 | Commercial |
| HGD31G16H13E | SK Hynix | H5TQ1G63EFR-11C | 1Gb | 64Mx16 | DDR3-1333 | 1.5V (DDR3) | VFBGA-96 | Commercial |
| HGD31G16N13 | Nanya | NT5CB64M16FP-DH | 1Gb | 64Mx16 | DDR3-1333 | 1.5V (DDR3) | VFBGA-96 | Commercial |
| HGD31G16N13L | Nanya | NT5CC64M16GP-DI | 1Gb | 64Mx16 | DDR3-1333 | 1.35V (DDR3L) | VFBGA-96 | Commercial |
| HGD32G16L16 | Samsung | K4B2G1646F-BYK0 | 2Gb | 128Mx16 | DDR3-1600 | 1.35V (DDR3L) | VFBGA-96 | Commercial |
| HGD32G16L18 | Samsung | K4B2G1646F-BYMA | 2Gb | 128Mx16 | DDR3-1866 | 1.35V (DDR3L) | VFBGA-96 | Commercial |
| HGD32G16L21 | Samsung | K4B2G1646F-BCNB | 2Gb | 128Mx16 | DDR3-2133 | 1.35V (DDR3L) | VFBGA-96 | Commercial |
| HGD32G16H18 | SK Hynix | H5TQ2G63DFR-RDC | 2Gb | 128Mx16 | DDR3-1866 | 1.5V (DDR3) | VFBGA-96 | Commercial |
| HGD32G16L18H | SK Hynix | H5TC2G63DFR-RDA | 2Gb | 128Mx16 | DDR3-1866 | 1.35V (DDR3L) | VFBGA-96 | Commercial |
| HGD32G16M16 | Micron | MT41K128M16JT-125 | 2Gb | 128Mx16 | DDR3-1600 | 1.35V (DDR3L) | VFBGA-96 | Commercial |
| HGD32G16N13 | Nanya | NT5CB128M16JR-FL | 2Gb | 128Mx16 | DDR3-1333 | 1.5V (DDR3) | VFBGA-96 | Commercial |
| HGD32G16N18 | Nanya | NT5CC128M16JR-EK | 2Gb | 128Mx16 | DDR3-1866 | 1.35V (DDR3L) | VFBGA-96 | Commercial |
| HGD32G16N18I | Nanya | NT5CC128M16JR-EKI | 2Gb | 128Mx16 | DDR3-1866 | 1.35V (DDR3L) | VFBGA-96 | Industrial |
| HGD32G08L16 | Samsung | K4B2G0846F-BYK0 | 2Gb | 256Mx8 | DDR3-1600 | 1.35V (DDR3L) | VFBGA-96 | Commercial |
| HGD32G08L18 | Samsung | K4B2G0846F-BYMA | 2Gb | 256Mx8 | DDR3-1866 | 1.35V (DDR3L) | VFBGA-96 | Commercial |
| HGD32G08H18 | SK Hynix | H5TQ2G83DFR-RDC | 2Gb | 256Mx8 | DDR3-1866 | 1.5V (DDR3) | VFBGA-96 | Commercial |
| HGD32G08L18H | SK Hynix | H5TC2G83DFR-RDA | 2Gb | 256Mx8 | DDR3-1866 | 1.35V (DDR3L) | VFBGA-96 | Commercial |
| HGD32G08N16 | Nanya | NT5CB256M8FN-EK | 2Gb | 256Mx8 | DDR3-1600 | 1.5V (DDR3) | VFBGA-96 | Commercial |
| HGD34G16S16 | Samsung | K4B4G1646D-BCK0 | 4Gb | 256Mx16 | DDR3-1600 | 1.5V (DDR3) | VFBGA-96 | Commercial |
| HGD34G16S18 | Samsung | K4B4G1646D-BCMA | 4Gb | 256Mx16 | DDR3-1866 | 1.5V (DDR3) | VFBGA-96 | Commercial |
| HGD34G16S21 | Samsung | K4B4G1646D-BCNB | 4Gb | 256Mx16 | DDR3-2133 | 1.5V (DDR3) | VFBGA-96 | Commercial |
| HGD34G16S16E | Samsung | K4B4G1646E-BCK0 | 4Gb | 256Mx16 | DDR3-1600 | 1.5V (DDR3) | VFBGA-96 | Commercial |
| HGD34G16L18E | Samsung | K4B4G1646E-BYMA | 4Gb | 256Mx16 | DDR3-1866 | 1.35V (DDR3L) | VFBGA-96 | Commercial |
| HGD34G16L21E | Samsung | K4B4G1646E-BYNB | 4Gb | 256Mx16 | DDR3-2133 | 1.35V (DDR3L) | VFBGA-96 | Commercial |
| HGD34G16H18 | SK Hynix | H5TQ4G63CFR-RDC | 4Gb | 256Mx16 | DDR3-1866 | 1.5V (DDR3) | VFBGA-96 | Commercial |
| HGD34G16L18H | SK Hynix | H5TC4G63EFR-RDI | 4Gb | 256Mx16 | DDR3-1866 | 1.35V (DDR3L) | VFBGA-96 | Commercial |
| HGD34G16L18HN | SK Hynix | H5TC4G63EFR-RDN | 4Gb | 256Mx16 | DDR3-1866 | 1.35V (DDR3L) | VFBGA-96 | Commercial |
| HGD34G16L21H | SK Hynix | H5TC4G63EFR-TEN | 4Gb | 256Mx16 | DDR3-2133 | 1.35V (DDR3L) | VFBGA-96 | Commercial |
| HGD34G16H21H | SK Hynix | H5TQ4G63EFR-TEN | 4Gb | 256Mx16 | DDR3-2133 | 1.5V (DDR3) | VFBGA-96 | Commercial |
| HGD34G16M16 | Micron | MT41K256M16HA-125 | 4Gb | 256Mx16 | DDR3-1600 | 1.35V (DDR3L) | VFBGA-96 | Commercial |
| HGD34G16N18 | Nanya | NT5CC256M16ER-EK | 4Gb | 256Mx16 | DDR3-1866 | 1.35V (DDR3L) | VFBGA-96 | Commercial |
| HGD34G16N18I | Nanya | NT5CC256M16ER-EKI | 4Gb | 256Mx16 | DDR3-1866 | 1.35V (DDR3L) | VFBGA-96 | Industrial |
| HGD34G16N13 | Nanya | NT5CB256M16ER-FL | 4Gb | 256Mx16 | DDR3-1333 | 1.5V (DDR3) | VFBGA-96 | Commercial |
| HGD34G16N21 | Nanya | NT5CB256M16CP | 4Gb | 256Mx16 | DDR3-2133 | 1.5V (DDR3) | VFBGA-96 | Commercial |
| HGD34G08S16 | Samsung | K4B4G0846D-BCK0 | 4Gb | 512Mx8 | DDR3-1600 | 1.5V (DDR3) | VFBGA-96 | Commercial |
| HGD34G08S18 | Samsung | K4B4G0846D-BCMA | 4Gb | 512Mx8 | DDR3-1866 | 1.5V (DDR3) | VFBGA-96 | Commercial |
| HGD34G08S21 | Samsung | K4B4G0846D-BCNB | 4Gb | 512Mx8 | DDR3-2133 | 1.5V (DDR3) | VFBGA-96 | Commercial |
| HGD34G08S16E | Samsung | K4B4G0846E-BCK0 | 4Gb | 512Mx8 | DDR3-1600 | 1.5V (DDR3) | VFBGA-96 | Commercial |
| HGD34G08L18E | Samsung | K4B4G0846E-BYMA | 4Gb | 512Mx8 | DDR3-1866 | 1.35V (DDR3L) | VFBGA-96 | Commercial |
| HGD34G08H18 | SK Hynix | H5TQ4G83CFR-RDC | 4Gb | 512Mx8 | DDR3-1866 | 1.5V (DDR3) | VFBGA-96 | Commercial |
| HGD34G08L18H | SK Hynix | H5TC4G83EFR-RDI | 4Gb | 512Mx8 | DDR3-1866 | 1.35V (DDR3L) | VFBGA-96 | Commercial |
| HGD34G08L16H | SK Hynix | H5TC4G83EFR-PBA | 4Gb | 512Mx8 | DDR3-1600 | 1.35V (DDR3L) | VFBGA-96 | Commercial |
| HGD34G08M16 | Micron | MT41K512M8RH-125 | 4Gb | 512Mx8 | DDR3-1600 | 1.35V (DDR3L) | VFBGA-96 | Commercial |
| HGD34G08N10 | Nanya | NT5CC512M8EQ-FL | 4Gb | 512Mx8 | DDR3-1066 | 1.5V (DDR3) | VFBGA-96 | Commercial |
| HGD38G04M16 | Micron | MT41K1G4RH-125 | 8Gb | 1Gx4 | DDR3-1600 | 1.35V (DDR3L) | VFBGA-96 | Commercial |
| HGD38G08S16 | Samsung | K4B8G0846D-MCK0 | 8Gb | 1Gx8 | DDR3-1600 | 1.5V (DDR3) | VFBGA-96 | Commercial |
| HGD38G08S18 | Samsung | K4B8G0846D-MCMA | 8Gb | 1Gx8 | DDR3-1866 | 1.5V (DDR3) | VFBGA-96 | Commercial |
| HGD38G08S21 | Samsung | K4B8G0846D-MCNB | 8Gb | 1Gx8 | DDR3-2133 | 1.5V (DDR3) | VFBGA-96 | Commercial |
| HGD38G08L16H | SK Hynix | H5TC8G63CMR-PBA | 8Gb | 1Gx8 | DDR3-1600 | 1.35V (DDR3L) | VFBGA-96 | Commercial |
| HGD38G16S16 | Samsung | K4B8G1646D-MCK0 | 8Gb | 512Mx16 | DDR3-1600 | 1.5V (DDR3) | VFBGA-96 | Commercial |
| HGD38G16S18 | Samsung | K4B8G1646D-MCMA | 8Gb | 512Mx16 | DDR3-1866 | 1.5V (DDR3) | VFBGA-96 | Commercial |
| HGD38G16S21 | Samsung | K4B8G1646D-MCNB | 8Gb | 512Mx16 | DDR3-2133 | 1.5V (DDR3) | VFBGA-96 | Commercial |
| HGD38G16M16 | Micron | MT41K512M16HA-125 | 8Gb | 512Mx16 | DDR3-1600 | 1.35V (DDR3L) | VFBGA-96 | Commercial |
Contact: info@hgtech.cc · +86 760 8992 4799
Compiled from the complete Micron DDR3 SDRAM part catalog (1/2/4/8Gb, x8/x16, 933MHz=1866MT/s and 1066MHz=2133MT/s): 29 part numbers including commercial, industrial IT/XIT, automotive AAT/AUT and enhanced-industrial AIT temperature grades, mapped to 11 HGCHIPS specifications. Mapping is a specification-to-specification comparison; production status must be confirmed part by part with our FAE. Parts marked "FAE review required" show Contact Sales status in the Micron catalog. Voltage convention: the Micron prefix carries the voltage — MT41K = 1.35V (DDR3L), MT41J = 1.5V (DDR3). Samsung / SK Hynix 1.35V parts include an L in the HGCHIPS part number (e.g. HGD32G16L18); the Micron family does not. Always confirm voltage in the table below.
| Micron part number | Density / Org | Speed | Voltage | Temp grade | HGCHIPS part | Status | Page |
|---|---|---|---|---|---|---|---|
| MT41K64M16TW-107 AAT:J | 1Gb / 64Mb x16 | DDR3-1866 | 1.35V | 车规级 | HGD31G16M18 | In stock | Stock page |
| MT41K64M16TW-107 AIT:J | 1Gb / 64Mb x16 | DDR3-1866 | 1.35V | 工业级增强 | HGD31G16M18 | FAE review required | Stock page |
| MT41K64M16TW-107 AUT:J | 1Gb / 64Mb x16 | DDR3-1866 | 1.35V | 车规级 | HGD31G16M18 | FAE review required | Stock page |
| MT41K64M16TW-107 IT:J | 1Gb / 64Mb x16 | DDR3-1866 | 1.35V | 工业级 | HGD31G16M18 | In stock | Stock page |
| MT41K64M16TW-107 XIT:J | 1Gb / 64Mb x16 | DDR3-1866 | 1.35V | 工业级 | HGD31G16M18 | FAE review required | Stock page |
| MT41K64M16TW-107:J | 1Gb / 64Mb x16 | DDR3-1866 | 1.35V | 商规 | HGD31G16M18 | In stock | Stock page |
| MT41K128M8DA-107 IT:J | 1Gb / 128Mb x8 | DDR3-1866 | 1.35V | 工业级 | HGD31G08M18 | FAE review required | Stock page |
| MT41K128M8DA-107:J | 1Gb / 128Mb x8 | DDR3-1866 | 1.35V | 商规 | HGD31G08M18 | FAE review required | Stock page |
| MT41K128M16JT-107 AAT:K | 2Gb / 128Mb x16 | DDR3-1866 | 1.35V | 车规级 | HGD32G16M18 | In stock | Stock page |
| MT41K128M16JT-107 IT:K | 2Gb / 128Mb x16 | DDR3-1866 | 1.35V | 工业级 | HGD32G16M18 | FAE review required | Stock page |
| MT41K128M16JT-107:K | 2Gb / 128Mb x16 | DDR3-1866 | 1.35V | 商规 | HGD32G16M18 | In stock | Stock page |
| MT41J128M16JT-093:K | 2Gb / 128Mb x16 | DDR3-2133 | 1.5V | 商规 | HGD32G16M21 | FAE review required | Stock page |
| MT41K256M8DA-107 AAT:K | 2Gb / 256Mb x8 | DDR3-1866 | 1.35V | 车规级 | HGD32G08M18 | FAE review required | Stock page |
| MT41K256M8DA-107:K | 2Gb / 256Mb x8 | DDR3-1866 | 1.35V | 商规 | HGD32G08M18 | FAE review required | Stock page |
| MT41K256M16TW-107 AAT:P | 4Gb / 256Mb x16 | DDR3-1866 | 1.35V | 车规级 | HGD34G16M18 | In stock | Stock page |
| MT41K256M16TW-107 AIT:P | 4Gb / 256Mb x16 | DDR3-1866 | 1.35V | 工业级增强 | HGD34G16M18 | In stock | Stock page |
| MT41K256M16TW-107 AUT:P | 4Gb / 256Mb x16 | DDR3-1866 | 1.35V | 车规级 | HGD34G16M18 | FAE review required | Stock page |
| MT41K256M16TW-107 IT:P | 4Gb / 256Mb x16 | DDR3-1866 | 1.35V | 工业级 | HGD34G16M18 | In stock | Stock page |
| MT41K256M16TW-107 XIT:P | 4Gb / 256Mb x16 | DDR3-1866 | 1.35V | 工业级 | HGD34G16M18 | In stock | Stock page |
| MT41K256M16TW-107:P | 4Gb / 256Mb x16 | DDR3-1866 | 1.35V | 商规 | HGD34G16M18 | In stock | Stock page |
| MT41K256M16TW-093:P | 4Gb / 256Mb x16 | DDR3-2133 | 1.35V | 商规 | HGD34G16M21 | In stock | Stock page |
| MT41K512M8DA-107 AAT:P | 4Gb / 512Mb x8 | DDR3-1866 | 1.35V | 车规级 | HGD34G08M18 | FAE review required | Stock page |
| MT41K512M8DA-107 IT:P | 4Gb / 512Mb x8 | DDR3-1866 | 1.35V | 工业级 | HGD34G08M18 | In stock | Stock page |
| MT41K512M8DA-107:P | 4Gb / 512Mb x8 | DDR3-1866 | 1.35V | 商规 | HGD34G08M18 | In stock | Stock page |
| MT41K512M8DA-093:P | 4Gb / 512Mb x8 | DDR3-2133 | 1.35V | 商规 | HGD34G08M21 | In stock | Stock page |
| MT41K512M16VRP-107 AAT:P | 8Gb / 512Mb x16 | DDR3-1866 | 1.35V | 车规级 | HGD38G16M18 | FAE review required | Stock page |
| MT41K512M16VRP-107 AIT:P | 8Gb / 512Mb x16 | DDR3-1866 | 1.35V | 工业级增强 | HGD38G16M18 | FAE review required | Stock page |
| MT41K512M16VRP-107 IT:P | 8Gb / 512Mb x16 | DDR3-1866 | 1.35V | 工业级 | HGD38G16M18 | In stock | Stock page |
| MT41K1G8RKB-107:P | 8Gb / 1Gb x8 | DDR3-1866 | 1.35V | 商规 | HGD38G08M18 | FAE review required | Stock page |
No board changes. DDR3 SDRAM is designed as a pin-to-pin drop-in: package and pin-out are checked field by field against the original datasheet, so it fits the existing PCB and firmware. Typical use is second-sourcing, EOL cover and allocation shortages.
Find your original part number, then check density, organization, speed grade, voltage, package and temperature range against your BOM. Any field that differs is stated on the page — we do not claim the parts are identical.
Samples from 10 pcs, credited against the first order. In-stock items ship from Shenzhen within 48 hours; long-lead projects can be price-locked. Parts are 100% inspected before shipment and batch test data is available for IQC.
Send your target part number, monthly usage and target price to info@hgtech.cc or call +86 760 8992 4799 — we reply within 24 business hours (same day for stock parts).
Page last updated: 2026-09-21