DDR3 SDRAM Drop-in Replacement Cross-reference — 57 Production Parts

HGCHIPS DDR3 SDRAM pin-to-pin cross-reference: 57 production parts engineered against Samsung, SK Hynix, Micron and Nanya original part numbers. Packages VFBGA-96. Lot test reports and 48-hour dispatch on stock.

DDR3 SDRAM Full Cross-reference Table

HGCHIPS partBrandOriginal partDensityOrgSpeedVoltagePackageTemp
HGD31G08S16SamsungK4B1G0846I-BCK01Gb128Mx8DDR3-16001.5V (DDR3)VFBGA-96Commercial
HGD31G08S21SamsungK4B1G0846I-BCNB1Gb128Mx8DDR3-21331.5V (DDR3)VFBGA-96Commercial
HGD31G16S16SamsungK4B1G1646I-BCK01Gb64Mx16DDR3-16001.5V (DDR3)VFBGA-96Commercial
HGD31G16S18SamsungK4B1G1646I-BCMA1Gb64Mx16DDR3-18661.5V (DDR3)VFBGA-96Commercial
HGD31G16H13SK HynixH5TQ1G63DFR-11C1Gb64Mx16DDR3-13331.5V (DDR3)VFBGA-96Commercial
HGD31G16H13ESK HynixH5TQ1G63EFR-11C1Gb64Mx16DDR3-13331.5V (DDR3)VFBGA-96Commercial
HGD31G16N13NanyaNT5CB64M16FP-DH1Gb64Mx16DDR3-13331.5V (DDR3)VFBGA-96Commercial
HGD31G16N13LNanyaNT5CC64M16GP-DI1Gb64Mx16DDR3-13331.35V (DDR3L)VFBGA-96Commercial
HGD32G16L16SamsungK4B2G1646F-BYK02Gb128Mx16DDR3-16001.35V (DDR3L)VFBGA-96Commercial
HGD32G16L18SamsungK4B2G1646F-BYMA2Gb128Mx16DDR3-18661.35V (DDR3L)VFBGA-96Commercial
HGD32G16L21SamsungK4B2G1646F-BCNB2Gb128Mx16DDR3-21331.35V (DDR3L)VFBGA-96Commercial
HGD32G16H18SK HynixH5TQ2G63DFR-RDC2Gb128Mx16DDR3-18661.5V (DDR3)VFBGA-96Commercial
HGD32G16L18HSK HynixH5TC2G63DFR-RDA2Gb128Mx16DDR3-18661.35V (DDR3L)VFBGA-96Commercial
HGD32G16M16MicronMT41K128M16JT-1252Gb128Mx16DDR3-16001.35V (DDR3L)VFBGA-96Commercial
HGD32G16N13NanyaNT5CB128M16JR-FL2Gb128Mx16DDR3-13331.5V (DDR3)VFBGA-96Commercial
HGD32G16N18NanyaNT5CC128M16JR-EK2Gb128Mx16DDR3-18661.35V (DDR3L)VFBGA-96Commercial
HGD32G16N18INanyaNT5CC128M16JR-EKI2Gb128Mx16DDR3-18661.35V (DDR3L)VFBGA-96Industrial
HGD32G08L16SamsungK4B2G0846F-BYK02Gb256Mx8DDR3-16001.35V (DDR3L)VFBGA-96Commercial
HGD32G08L18SamsungK4B2G0846F-BYMA2Gb256Mx8DDR3-18661.35V (DDR3L)VFBGA-96Commercial
HGD32G08H18SK HynixH5TQ2G83DFR-RDC2Gb256Mx8DDR3-18661.5V (DDR3)VFBGA-96Commercial
HGD32G08L18HSK HynixH5TC2G83DFR-RDA2Gb256Mx8DDR3-18661.35V (DDR3L)VFBGA-96Commercial
HGD32G08N16NanyaNT5CB256M8FN-EK2Gb256Mx8DDR3-16001.5V (DDR3)VFBGA-96Commercial
HGD34G16S16SamsungK4B4G1646D-BCK04Gb256Mx16DDR3-16001.5V (DDR3)VFBGA-96Commercial
HGD34G16S18SamsungK4B4G1646D-BCMA4Gb256Mx16DDR3-18661.5V (DDR3)VFBGA-96Commercial
HGD34G16S21SamsungK4B4G1646D-BCNB4Gb256Mx16DDR3-21331.5V (DDR3)VFBGA-96Commercial
HGD34G16S16ESamsungK4B4G1646E-BCK04Gb256Mx16DDR3-16001.5V (DDR3)VFBGA-96Commercial
HGD34G16L18ESamsungK4B4G1646E-BYMA4Gb256Mx16DDR3-18661.35V (DDR3L)VFBGA-96Commercial
HGD34G16L21ESamsungK4B4G1646E-BYNB4Gb256Mx16DDR3-21331.35V (DDR3L)VFBGA-96Commercial
HGD34G16H18SK HynixH5TQ4G63CFR-RDC4Gb256Mx16DDR3-18661.5V (DDR3)VFBGA-96Commercial
HGD34G16L18HSK HynixH5TC4G63EFR-RDI4Gb256Mx16DDR3-18661.35V (DDR3L)VFBGA-96Commercial
HGD34G16L18HNSK HynixH5TC4G63EFR-RDN4Gb256Mx16DDR3-18661.35V (DDR3L)VFBGA-96Commercial
HGD34G16L21HSK HynixH5TC4G63EFR-TEN4Gb256Mx16DDR3-21331.35V (DDR3L)VFBGA-96Commercial
HGD34G16H21HSK HynixH5TQ4G63EFR-TEN4Gb256Mx16DDR3-21331.5V (DDR3)VFBGA-96Commercial
HGD34G16M16MicronMT41K256M16HA-1254Gb256Mx16DDR3-16001.35V (DDR3L)VFBGA-96Commercial
HGD34G16N18NanyaNT5CC256M16ER-EK4Gb256Mx16DDR3-18661.35V (DDR3L)VFBGA-96Commercial
HGD34G16N18INanyaNT5CC256M16ER-EKI4Gb256Mx16DDR3-18661.35V (DDR3L)VFBGA-96Industrial
HGD34G16N13NanyaNT5CB256M16ER-FL4Gb256Mx16DDR3-13331.5V (DDR3)VFBGA-96Commercial
HGD34G16N21NanyaNT5CB256M16CP4Gb256Mx16DDR3-21331.5V (DDR3)VFBGA-96Commercial
HGD34G08S16SamsungK4B4G0846D-BCK04Gb512Mx8DDR3-16001.5V (DDR3)VFBGA-96Commercial
HGD34G08S18SamsungK4B4G0846D-BCMA4Gb512Mx8DDR3-18661.5V (DDR3)VFBGA-96Commercial
HGD34G08S21SamsungK4B4G0846D-BCNB4Gb512Mx8DDR3-21331.5V (DDR3)VFBGA-96Commercial
HGD34G08S16ESamsungK4B4G0846E-BCK04Gb512Mx8DDR3-16001.5V (DDR3)VFBGA-96Commercial
HGD34G08L18ESamsungK4B4G0846E-BYMA4Gb512Mx8DDR3-18661.35V (DDR3L)VFBGA-96Commercial
HGD34G08H18SK HynixH5TQ4G83CFR-RDC4Gb512Mx8DDR3-18661.5V (DDR3)VFBGA-96Commercial
HGD34G08L18HSK HynixH5TC4G83EFR-RDI4Gb512Mx8DDR3-18661.35V (DDR3L)VFBGA-96Commercial
HGD34G08L16HSK HynixH5TC4G83EFR-PBA4Gb512Mx8DDR3-16001.35V (DDR3L)VFBGA-96Commercial
HGD34G08M16MicronMT41K512M8RH-1254Gb512Mx8DDR3-16001.35V (DDR3L)VFBGA-96Commercial
HGD34G08N10NanyaNT5CC512M8EQ-FL4Gb512Mx8DDR3-10661.5V (DDR3)VFBGA-96Commercial
HGD38G04M16MicronMT41K1G4RH-1258Gb1Gx4DDR3-16001.35V (DDR3L)VFBGA-96Commercial
HGD38G08S16SamsungK4B8G0846D-MCK08Gb1Gx8DDR3-16001.5V (DDR3)VFBGA-96Commercial
HGD38G08S18SamsungK4B8G0846D-MCMA8Gb1Gx8DDR3-18661.5V (DDR3)VFBGA-96Commercial
HGD38G08S21SamsungK4B8G0846D-MCNB8Gb1Gx8DDR3-21331.5V (DDR3)VFBGA-96Commercial
HGD38G08L16HSK HynixH5TC8G63CMR-PBA8Gb1Gx8DDR3-16001.35V (DDR3L)VFBGA-96Commercial
HGD38G16S16SamsungK4B8G1646D-MCK08Gb512Mx16DDR3-16001.5V (DDR3)VFBGA-96Commercial
HGD38G16S18SamsungK4B8G1646D-MCMA8Gb512Mx16DDR3-18661.5V (DDR3)VFBGA-96Commercial
HGD38G16S21SamsungK4B8G1646D-MCNB8Gb512Mx16DDR3-21331.5V (DDR3)VFBGA-96Commercial
HGD38G16M16MicronMT41K512M16HA-1258Gb512Mx16DDR3-16001.35V (DDR3L)VFBGA-96Commercial

Selection Notes

  • Density and organization — match organization to your memory controller.
  • Speed grade — higher grades are generally downward compatible.
  • Voltage — DDR3 1.5V, DDR3L 1.35V, DDR4 1.2V, LPDDR4/X 1.8/1.1V.
  • Temperature — commercial 0~85C, industrial -40~85C.
  • Confirmation — cross-brand replacement requires matching density, organization, speed, voltage and die; confirm with our FAE before ramp-up.

Contact: info@hgtech.cc · +86 760 8992 4799

Micron DDR3-1866 / DDR3-2133 Full Cross-reference (29 parts)

Compiled from the complete Micron DDR3 SDRAM part catalog (1/2/4/8Gb, x8/x16, 933MHz=1866MT/s and 1066MHz=2133MT/s): 29 part numbers including commercial, industrial IT/XIT, automotive AAT/AUT and enhanced-industrial AIT temperature grades, mapped to 11 HGCHIPS specifications. Mapping is a specification-to-specification comparison; production status must be confirmed part by part with our FAE. Parts marked "FAE review required" show Contact Sales status in the Micron catalog. Voltage convention: the Micron prefix carries the voltage — MT41K = 1.35V (DDR3L), MT41J = 1.5V (DDR3). Samsung / SK Hynix 1.35V parts include an L in the HGCHIPS part number (e.g. HGD32G16L18); the Micron family does not. Always confirm voltage in the table below.

Micron part numberDensity / OrgSpeedVoltageTemp gradeHGCHIPS partStatusPage
MT41K64M16TW-107 AAT:J1Gb / 64Mb x16DDR3-18661.35V车规级HGD31G16M18In stockStock page
MT41K64M16TW-107 AIT:J1Gb / 64Mb x16DDR3-18661.35V工业级增强HGD31G16M18FAE review requiredStock page
MT41K64M16TW-107 AUT:J1Gb / 64Mb x16DDR3-18661.35V车规级HGD31G16M18FAE review requiredStock page
MT41K64M16TW-107 IT:J1Gb / 64Mb x16DDR3-18661.35V工业级HGD31G16M18In stockStock page
MT41K64M16TW-107 XIT:J1Gb / 64Mb x16DDR3-18661.35V工业级HGD31G16M18FAE review requiredStock page
MT41K64M16TW-107:J1Gb / 64Mb x16DDR3-18661.35V商规HGD31G16M18In stockStock page
MT41K128M8DA-107 IT:J1Gb / 128Mb x8DDR3-18661.35V工业级HGD31G08M18FAE review requiredStock page
MT41K128M8DA-107:J1Gb / 128Mb x8DDR3-18661.35V商规HGD31G08M18FAE review requiredStock page
MT41K128M16JT-107 AAT:K2Gb / 128Mb x16DDR3-18661.35V车规级HGD32G16M18In stockStock page
MT41K128M16JT-107 IT:K2Gb / 128Mb x16DDR3-18661.35V工业级HGD32G16M18FAE review requiredStock page
MT41K128M16JT-107:K2Gb / 128Mb x16DDR3-18661.35V商规HGD32G16M18In stockStock page
MT41J128M16JT-093:K2Gb / 128Mb x16DDR3-21331.5V商规HGD32G16M21FAE review requiredStock page
MT41K256M8DA-107 AAT:K2Gb / 256Mb x8DDR3-18661.35V车规级HGD32G08M18FAE review requiredStock page
MT41K256M8DA-107:K2Gb / 256Mb x8DDR3-18661.35V商规HGD32G08M18FAE review requiredStock page
MT41K256M16TW-107 AAT:P4Gb / 256Mb x16DDR3-18661.35V车规级HGD34G16M18In stockStock page
MT41K256M16TW-107 AIT:P4Gb / 256Mb x16DDR3-18661.35V工业级增强HGD34G16M18In stockStock page
MT41K256M16TW-107 AUT:P4Gb / 256Mb x16DDR3-18661.35V车规级HGD34G16M18FAE review requiredStock page
MT41K256M16TW-107 IT:P4Gb / 256Mb x16DDR3-18661.35V工业级HGD34G16M18In stockStock page
MT41K256M16TW-107 XIT:P4Gb / 256Mb x16DDR3-18661.35V工业级HGD34G16M18In stockStock page
MT41K256M16TW-107:P4Gb / 256Mb x16DDR3-18661.35V商规HGD34G16M18In stockStock page
MT41K256M16TW-093:P4Gb / 256Mb x16DDR3-21331.35V商规HGD34G16M21In stockStock page
MT41K512M8DA-107 AAT:P4Gb / 512Mb x8DDR3-18661.35V车规级HGD34G08M18FAE review requiredStock page
MT41K512M8DA-107 IT:P4Gb / 512Mb x8DDR3-18661.35V工业级HGD34G08M18In stockStock page
MT41K512M8DA-107:P4Gb / 512Mb x8DDR3-18661.35V商规HGD34G08M18In stockStock page
MT41K512M8DA-093:P4Gb / 512Mb x8DDR3-21331.35V商规HGD34G08M21In stockStock page
MT41K512M16VRP-107 AAT:P8Gb / 512Mb x16DDR3-18661.35V车规级HGD38G16M18FAE review requiredStock page
MT41K512M16VRP-107 AIT:P8Gb / 512Mb x16DDR3-18661.35V工业级增强HGD38G16M18FAE review requiredStock page
MT41K512M16VRP-107 IT:P8Gb / 512Mb x16DDR3-18661.35V工业级HGD38G16M18In stockStock page
MT41K1G8RKB-107:P8Gb / 1Gb x8DDR3-18661.35V商规HGD38G08M18FAE review requiredStock page

Ramp-up notes

  • Lock the mapping on density + organization + speed + voltage first; only step up the temperature grade when the platform truly requires it (automotive and industrial grades carry a clear price premium).
  • 1866MT/s (933MHz) is downward compatible with 1600MT/s platforms, and 2133MT/s (1066MHz) likewise; confirm platform speed in the controller datasheet.
  • Cross-check pin-out and register maps with our FAE and complete small-batch validation before ramp-up.
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